Silizium-Wafer

Anfrage Lagerbestand

Diameter (mm)
50.8
76.2
100
125
150
200
300

Orientation
C-Plane (0001)
A-Plane (11-20)
R-Plane (1-102)
M-Plane (10-10)

Thickness

min ≥
max ≤
12 Treffer 

AZ32013
50,8
0,1
/
99.998 %
C-Plane (0001) OFF 2° ±0.2°
430
25
Polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
/
10
15
13
/
AO33016
76,2
0,3
/
99.998 %
C-Plane (0001) ON ±0.1°
380
20
Epi-polished (Ra<=0.3 nm)
Epi-polished (Ra<=0.3 nm)
/
1 primary Flat. SEMI Std.
/
/
10
15
12
/
R32007
50,8
0,1
/
99.998 %
M-Plane (10-10) ON ±0.1°
430
20
Epi-polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
/
10
10
4
/
AO32007
50,8
0,3
/
99.998 %
C-Plane (0001) ON ±0.2°
430
20
Epi-polished (Ra<=0.3 nm)
Epi-polished (Ra<=0.3 nm)
/
1 Primary Flat. SEMI-Std.
/
/
5
10
66
/
AZ32001
50,8
0,1
/
99.998 %
C-Plane (0001) ON ±0.2°
430
20
Polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
/
10
15
78
/
AC36003
150
0,3
/
99.998 %
C-Plane (0001) ON ±0.1°
700
40
Polished Side A. S/D: 20/10
Polished Side B. S/D: 80/50
<=5 Å
1 Primary Flat. SEMI-Std.
/
Next to primary flat on B-side. S/D = 80/50
/
/
25
/
AZ33005
76,2
0,3
/
99.998 %
C-Plane (0001) ON ±0.1°
500
20
Polished (Ra<=0.3 nm)
Polished (Ra<=0.3 nm)
/
1 Primary Flat. SEMI-Std.
/
None
10
/
51
/
AZ34001
100
0,1
/
99.998 %
C-Plane (0001) ON ±0.3°
650
25
Polished (Ra<=0.3 nm)
As Lapped (Ra<1.2 µm)
/
1 Primary Flat
/
None
10
15
106
/
AZ34006
100
0,1
/
99.998 %
C-Plane (0001) ON ±0.2°
650
25
Polished (Ra<=0.3 nm)
Polished (Ra<=0.3 nm)
/
1 Primary Flat
/
None
10
15
75
/
AO32017
50,8
0,2
/
99.998 %
R-Plane (1-102) ±0.2°
430
20
Epi-polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
None
10
15
35
/
AZ32004
50,8
0,1
/
99.998 %
A-Plane (11-20) ON ±0.2°
430
20
Polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
None
10
10
48
/
AZ34004
100
0,1
/
99.998 %
C-Plane (0001) ON ±0.2°
650
25
Polished (Ra<=0.3 nm)
Polished (Ra<=0.3 nm)
/
1 Primary Flat. SEMI-Std.
/
Yes
10
15
5
/
Anfrage Lagerbestand