Saphir-Wafer

Anfrage Lagerbestand

Diameter (mm)
50.8
76.2
100
125
150
200
300

Orientation
C-Plane (0001)
A-Plane (11-20)
R-Plane (1-102)
M-Plane (10-10)

Thickness

min ≥
max ≤
11 Treffer 

AC32027
50,8
0,3
/
>99.99 %
C-Plane (0001) 0.25° OFF tow. A-Plane ±0.1°
430
25
Epi-polished (Ra<=0.3 nm)
As Lapped (Ra<1.2 µm)
/
1 Primary Flat. SEMI-Std.
/
/
10
10
5
/
AO32006
50,8
0,3
/
99.998 %
C-Plane (0001) ON ±0.2°
430
20
Epi-polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
/
5
10
100
/
AO32017
50,8
0,2
/
99.998 %
R-Plane (1-102) ±0.2°
430
20
Epi-polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
None
10
15
55
/
AC33006
76,2
0,3
/
99.998 %
C-Plane (0001) ±0.3°
500
20
Epi-ready Polished (Ra<=0.3 nm)
Epi-ready Polished (Ra<=0.3 nm)
/
1 Primary Flat. SEMI-Std.
/
None
10
10
100
/
AZ32001
50,8
0,1
/
99.998 %
C-Plane (0001) ON ±0.2°
430
20
Polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
/
10
15
165
/
AZ32004
50,8
0,1
/
99.998 %
A-Plane (11-20) ON ±0.2°
430
20
Polished (Ra<=0.3 nm)
As Lapped (Ra<1 µm)
/
1 Primary Flat. SEMI-Std.
/
None
10
10
34
/
AZ32033
50,8
0,1
/
99.998 %
C-Plane (0001) ON ±0.2°
430
25
Polished (Ra<=0.3 nm)
Polished (Ra<=0.3 nm)
/
1 Primary Flat. SEMI-Std.
/
/
10
10
220
/
AZ32048
50,8
0,1
/
/
C-Plane (0001) ON ±0.2°
250
25
Polished (Ra<=0.3 nm)
Polished (Ra<=0.3 nm)
/
1 Primary Flat. SEMI-Std.
/
/
10
15
5
/
AZ34016
100
0,3
/
99.998 %
C-Plane (0001) ON ±0.2°
381
20
Polished (Ra<=0.3 nm)
Polished (Ra<=0.3 nm)
/
1. SEMI Std.
/
/
10
10
100
/
AZ34038
100
0,1
/
99.998 %
C-Plane (0001) ON ±0.3°
650
25
Polished (Ra<=0.3 nm)
As Lapped (Ra<1.2 µm)
/
1 Primary Flat
/
None
10
15
105
/
AZ34041
100
0,1
/
99.998 %
C-Plane (0001) ON ±0.2°
650
25
Polished (Ra<=0.3 nm)
Polished (Ra<=0.3 nm)
/
1 Primary Flat
/
None
10
15
135
/
Anfrage Lagerbestand